Diffused Ion Implantation profile Calculator and Graph
---RESULTS currently BEING VERIFIED---For implantation into silicon substrate
Instructions:
This calculator takes worths for as much as six various implants and also displays the concentration file on the graph below. The sum of the implants is additionally shown. The implants might be presented with or there is no the effects of diffusion. To calculate a series of implants there is no diffusion leaving the diffusion time together zero. A depth in the substrate might be mentioned in the "Substrate Depth (x)" crate which will certainly then be used to calculate the concentration of the sum of the implants at "x". The CSV button will open up another window or tab and display the data presented on the graph in CSV format. This data may be saved and also imported into most data analysis programs.
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Warning:
Javascript is an extremely slow in Microsoft internet Explorer, therefore the calculation will certainly take a lengthy time if over there is much more than one implant. All various other browsers should finish the calculation nearly instantly.Number the Implants: 1 2 3 4 5 6| Dopant: Arsenic Boron Phosphorus | Diffusion Temperature: | Diffusion Time: |
| Implant 1 |
Ion Energy:| (0-400) |
| Ion Dose: | |
Implant 2 Ion Energy:| (0-200) | | Ion Dose: | |
| Implant 3 Ion Energy:| (0-200) | | Ion Dose: | |
| Implant 4Ion Energy:| (0-200) | | Ion Dose: | | | Implant 5 Ion Energy:| (0-200) | | Ion Dose: | |
| Implant 6 Ion Energy:| (0-200) | | Ion Dose: | |
| Substrate Depth (x): | <µm> | | | Ion Concentration at x: | |
Click here for a list of Ion Implantation Houses.Diffusion constants to be taken native the "Quick Reference hands-on for Silicon combined Circuit Technology", through W. E. Beadle, J. C. C. Tsai, and R. D.
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Plummer.Polynomial coefficients for range and straggle calculation, and diffused implant file equation taken native "Analysis and Simulation that Semiconductor Devices", pp. (48-51, 72), Seigfried Selberherr, 1984.
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